Available for Import
Gallium Nitride Epitaxy System TM 200-01 for Power Transistors Production
Manufacturer:
NIITM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Gallium Nitride MOS-HYDRID EPITAXATION INSTALLATION ON SUBstrates with a diameter up to 200 mm for the production of power transistors
Specifications
Length
1300 mm
Width
4150 mm
Performance
Up to 2000 epitaxial growth processes of transistor structures per year.
Substrate holder heating temperature
1150 °C
Dimensions
4150x1300x2850 mm
Plate diameter
200 mm
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Metallic Photo Template 41x18mm for PCB and Stencils
View Details
Optical Parts Final Cleaning Machine UO-30PM
View Details
Thermal Radiation Oven for Drying Paints and Solder Paste
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions