
High-Power DMOS Transistors 2P7242A-4 for Hybrid Integrated Circuits
Manufacturer:NPP Iskra OJSC
Price:Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Boxless high-power silicon planar field diodes with n-type channel, with rigid leads on crystal holder, intended for operation as part of hybrid integrated circuits (ICs) in modules, microassemblies and blocks of secondary power supplies of special-purpose equipment
Specifications
Maximum allowable DC drain-to-source voltage
600 V
Maximum permissible DC drain current
20 A
Drain-to-source resistance in open state
0.2 ohm
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In

Power Wrenches K3003KI014
View Details
Special Purpose Transistor Optocoupler 3OT127A
View Details
Powerful IGBT Module AnM450HBE12M for Efficient Energy Control
View Details
Power IGBT Module AnM450HBE065M for Efficient Switching
View Details
High Voltage Bipolar Power Transistor 2T8144VM1
View Details
AnDM100AD17M Power Module - Efficient Power Management
View Details
AnDM400SC12M Power Module
View Details
Powerful GaN Microwave Transistor for Amplification PP9137A
View Details
Field-effect P-Channel Transistor 2P527A9
View Details
High-Power NPN Switching Transistor 2T867A for Special Applications
View Details
LDMOS Microwave Transistor for Pulse Operation 2P9116B 1030-1090MHz
View Details
DMOП P-Channel Transistor AnP53P03
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions