Available for Import
Insulated Gate Bipolar Transistor IGB AnR25IGB12D
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Isolated gate bipolar transistor (IGB) AnR25IGB12D
Specifications
Housing type
TO-247 (KT-43V)
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
25 A
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Powerful GaN-based Microwave Transistor PP9170D
View DetailsPower Module AnM200HBB12M for Industrial Applications
View DetailsHigh-Power NPN Transistors for Special Applications 2T968A-5
View DetailsHigh Voltage N-P-N Silicon Planar Switching Transistor KT8190V
View DetailsHigh-Voltage Bipolar Power Transistors 2T8143F1
View DetailsHigh Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829A
View DetailsNon-Hermetic Package Transistors and Diodes AnS75IGB065D
View DetailsHigh Voltage N-P-N Silicon Planar Switching Transistor KT8121B2
View DetailsPowerful GaN-based Microwave Transistor PP9170G
View DetailsPowerful GaN-Based Microwave Transistor PP9170B
View DetailsSilicon N-P-N Switching Transistor KT908A
View DetailsHigh Voltage N-Channel DMOS Transistor KP7154BS
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions