
Insulated Gate Bipolar Transistor IGB AnS100IGB12D
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Isolated gate bipolar transistor (IGB) AnS100IGB12D
Specifications
Housing type
SOT-227 (MPK-30)
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
100 A
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In

Powerful GaN Microwave Transistor for Amplification PP9137A
View Details
Power Module MTKI-2000-25 for Industrial Applications
View Details
High Voltage N-P-N Silicon Planar Switching Transistor KT8190V
View Details
Special Purpose Transistor Optocouplers 3OT127V
View Details
Powerful NPN Switching Transistors for Special Applications 2T856G
View Details
Continuous Mode DMOS RF Transistor P - 2P979B, 230MHz
View Details
AnDM100AD17M Power Module - Efficient Power Management
View Details
Powerful Silicon High Voltage N-Channel DMOS Transistors and Modules 2P829G
View Details
High-Power High-Voltage Field Transistor KP829A
View Details
High Voltage N-Channel DMOS Transistor KP7154BS
View Details
Silicon Epitaxial Planar p-n-p Transistor 2T3129B9/PK
View Details
N-Channel MOSFET Transistor AnB12N20
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions