
Power IGBT module AnM150HBA065M
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM150HBA065M
Specifications
Housing type
mpk-34
Type of acceptance
QA
Maximum allowable voltage
650 V
Maximum permissible current
150 A
Recovery time
180
Configuration type
half-bridge
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In

High Voltage N-P-N Silicon Planar Switching Transistor KT8121B2
View Details
High Voltage Powerful N-Channel DMOS Transistors and Modules 2P829B9
View Details
Powerful High-Voltage N-P-N Switching Transistor KT8143F
View Details
Low-Noise GaAs Planar Field Transistor AП379A9
View Details
High-Power NPN Transistors for Special Applications 2T968A-5
View Details
Powerful NPN Switching Transistor 2T808A-2 for Special Applications
View Details
High-Frequency p-n-p Transistor 2T3108A/PK
View Details
LDMOS Microwave Transistor for Pulse Operation 2P9116B 1030-1090MHz
View Details
N-Channel MOSFET Transistor An10N70S10
View Details
Non-Hermetic Package Transistors and Diodes AnS75IGB065D
View Details
Field-effect P-Channel Transistor 2P527A9
View Details
High-Power GaN Microwave Transistor PP9138A
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions