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GaN Microwave Transistor up to 6 GHz, SVC0102 for High-Power Applications

Microwave Tubes & Amplifiers

Manufacturer: Svetlana-Rost OJSC

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Description

The microwave transistor with 7 mm periphery and 24 W output power is manufactured according to PN05D technology of Svetlana-Rost JSC. Main parameters: Frequency range: 0 - 6 GHz; Output power (P 3dB ): 24 W at 3 GHz; Gain in linear mode: 14 dB; Operating voltage: 28 V; Overall dimensions: 1710 x 950 x 100 µm. The transistor is supplied as a crystal. The sources are commutated through holes with a backside metallisation.

Specifications

Overall dimensions

1710 x 950 x 100 microns

Frequency range

0...6

Operating voltage

28 V

Gain in linear mode

Output power (P 3dB )

24 W

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Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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GaN Microwave Transistor up to 6 GHz, SVC0102 for High-Power Applications

Description

Specifications

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