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High-frequency special-purpose field-effect transistors 2?302B/IU
Manufacturer:
NPP Iskra OJSC
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Description
Silicon planar field-effect transistors with a diffused gate and a
n-channel, designed for operation in special-purpose equipment.
n-channel, designed for operation in special-purpose equipment.
Specifications
Steepness of characteristic
7 mA/V
Initial drain current
0.018...0.043 A
Cut-off voltage
7 V
Gate leakage current
1.0E-8 A
Reverse current of gate-to-drain p-n junction
1.0E-6 A
Drain-to-source resistance in open state
150 ohm
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