Available for Import
High-Power GaN Microwave Transistors PП9136A for Amplification Applications
Manufacturer:
NIIET OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Powerful microwave transistors based on gallium nitride for use in amplifier stages, L-, S- and C-band frequencies. Due to small values of parasitic parameters they have increased performance characteristics. The use of transistors in final products will allow to achieve higher tactical and technical characteristics.
Specifications
Maximum current
1 A
Maximum voltage
130 V
Frequency range up to
6000
Output power
5 W
Transistor weight
1 year
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Special Purpose Thyristor Optocouplers 3OU186B
View Details
Powerful GaN-Based Microwave Transistor PP9170V
View Details
Powerful Linear LDMOS Transistor KP9171BS
View Details
DMOП P-Channel Transistor AnP53P03
View Details
N-channel MOSFET Transistor AnU12N10L
View Details
N-Channel MOSFET Transistor AnB3N120 for Efficient Switching
View Details
Power Switches K3003KI014A
View Details
AnDM400SC12M Power Module
View Details
Continuous Mode DMOS RF Transistor P - 2P979B, 230MHz
View Details
High-Power DMOS Transistors 2P7242A-4
View Details
Powerful NPN Switching Transistors for Special Applications 2T856G
View Details
Dual N-Channel Power MOSFET Transistor MIK8205
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions