Available for Import
High-power high-voltage field-effect transistor KP829G9
Manufacturer:
NPP Iskra OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
RSI.open.= 0.05Ohm; USI max = 200B; UZI max = ±25V; IC max = 40A; Rmah=125W
Specifications
Assignment
for use in modern and advanced secondary power supply sources, in nodes and blocks of converters and in other equipment of wide application manufactured for the national economy
Type
powerful high-voltage
Model
KP829G9
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Powerful IGBT Module AnM450HBE12M for Efficient Energy Control
View DetailsHigh Voltage N-P-N Silicon Planar Switching Transistor KT8190V
View DetailsPower IGBT Module AnM200RCB065M
View DetailsPowerful GaN Microwave Transistor for Amplifier Applications PP9170E
View DetailsHigh-Power IGBT Module AnM150HBEВ12M
View DetailsPowerful GaN-based Microwave Transistor PP9170G
View DetailsHigh Voltage Power N-Channel DMOS Transistors and Modules 2P829G9
View DetailsP-N-P Silicon Transistor KT234V9
View DetailsHigh-Power High-Voltage Field Transistor KP829D
View DetailsPowerful High-Voltage Field Transistor KP829B
View DetailsHigh-Power High-Voltage Field Transistor KP829B9
View DetailsTransistor Optocoupler AOT123A with Local Gold Plating
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions