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High-Power Laser Diode 750-990nm for Electronic Applications - YDGK.433751.395
Manufacturer:
INZHTEKT LLC
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Description
Laser diode with wavelength 750-990 nm with power up to 20 W for energy conversion for application in electronic, radio-electronic and optoelectronic products.
Specifications
Beam divergence (full width at half-height), in the plane parallel to the p-n junction
Not more than 10 degrees
Beam divergence (full width at half-height), in the plane perpendicular to the p-n junction
No more than 40 degrees
Relative humidity (non-condensing)
60 °C
Temperature of the heat sink
25 %
Ambient temperature operating range
15...35 °C
Voltage, max.
2 V
Laser power
5...20 W
Pumping current, not more
24 A
Wavelength of the maximum envelope of the laser spectrum, nm
750...990
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Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
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