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High-power NPN special-purpose switching transistors
Manufacturer:
NPP Iskra OJSC
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Description
Silicon epitaxial-planar n-p-n high-power switch transistors in metal-ceramic package designed for use in high-power key devices and other special-purpose equipment.
Specifications
Collector reverse current
0.003 A
Emitter reverse current
0.01 A
Boundary voltage
200 V
Collector-emitter saturation voltage
2 V
Base-emitter saturation voltage
1.8 V
Secondary breakdown energy
100
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