High-Power NPN Switching Transistor 2T867A - Special Applications

Description

Silicon planar-epitaxial n-p-n high-power high-voltage transistor in glass-metal package, designed for operation in special-purpose equipment circuits.

Specifications

Collector reverse current
0.003 A
Emitter reverse current
0.01 A
Boundary voltage
200 V
Collector-emitter saturation voltage
1.2 V
Decline time
0.4
Resorption time
1.3
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Delivery & Payment

Shipping Terms

FOB Novorossiysk, RussiaCIF Available to major ports worldwideEXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C)Wire Transfer (T/T)Escrow Services

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