
High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829A for Secondary Power Sources
Manufacturer:
NPP Iskra OJSC
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Description
Power field n-channel transistors of unified design in metal-ceramic packages, designed for use in modern and advanced secondary power supply sources, nodes and blocks of converters and other special purpose equipment.
Specifications
Initial drain current
0.001 A
Gate leakage current
1.0E-7 A
Drain-to-source resistance in open state
0.5 ohm
Threshold voltage
2...4 V
Switch-on delay time
60
Rise time
Built-in memory card slot, support microSD/SDHC/SDXC card (up to 256GB); manual recording/alarm recording
Shutdown delay time
175
Decline time
40
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Delivery Time
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Air freight: 14-21 days (for urgent orders)
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