High Voltage Silicon Power N-Channel DMOS Transistors 2P829A

High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829A for Secondary Power Sources

Manufacturer: NPP Iskra OJSC
Price: Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

Description

Power field n-channel transistors of unified design in metal-ceramic packages, designed for use in modern and advanced secondary power supply sources, nodes and blocks of converters and other special purpose equipment.

Specifications

Initial drain current
0.001 A
Gate leakage current
1.0E-7 A
Drain-to-source resistance in open state
0.5 ohm
Threshold voltage
2...4 V
Switch-on delay time
60
Rise time
Built-in memory card slot, support microSD/SDHC/SDXC card (up to 256GB); manual recording/alarm recording
Shutdown delay time
175
Decline time
40
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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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