Available for Import
N-Channel Power MOSFET Crystal Plate 3N20 for High-Performance Applications
Manufacturer:
MICRON OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Available Models
Description
N-channel power field-effect transistor, manufactured by Trench MOSFET technology on 200mm diameter wafers
Specifications
Drain-to-source voltage
20 V
Gate-source voltage
B1/B8 2100/900 MHz V
Operating temperature range
50...150 °C
Storage temperature range
50...150 °C
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
UV-457 Wave Running Lamp for Enhanced Illumination
View Details
High Purity Trichloroarsine (AsCl3) for Epitaxial Growth
View Details
Impulse Magnetron MI-714
View Details
Running Wave Lamp "Schlisselburg
View Details
Impulse Magnetron MI-710
View Details
MI-726 Impulse Magnetron for High-Performance Applications
View Details
Two-Stage Amplifier Model 001
View Details
Ka Band Power Amplifier for High Frequency Applications
View Details
Ku-Band Power Amplifier for Long Wave Applications
View Details
UV Wave Running Lamp UV-104-1
View Details
High Power Microwave Amplifier U52242
View Details
Phase Modulator LITERA 6
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions