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N-Channel Power MOSFET Crystal Plate 3N20 for High-Performance Applications
Manufacturer:
MICRON OJSC
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Description
N-channel power field-effect transistor, manufactured by Trench MOSFET technology on 200mm diameter wafers
Specifications
Drain-to-source voltage
20 V
Gate-source voltage
B1/B8 2100/900 MHz V
Operating temperature range
50...150 °C
Storage temperature range
50...150 °C
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