
Power IGBT module AnM200HBEB065M
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM200HBEB065M
Specifications
Housing type
mpk-62
Type of acceptance
QA
Maximum allowable voltage
650 V
Maximum permissible current
200 A
Configuration type
half-bridge
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In

Powerful Silicon Epitaxial-Planar n-p-n Switching Transistor KT879A
View Details
High-Power Special Purpose Field Effect Transistors 2P7152A
View Details
High-Frequency Impulse Transistors for Special Applications 2T603B/IU
View Details
High Voltage Bipolar Power Transistor 2T8143U
View Details
High Voltage N-P-N Silicon Planar Switching Transistor KT8190V
View Details
N-Channel MOSFET Transistor AnS140N06
View Details
Power IGBT Module AnM450HBE065M for Efficient Switching
View Details
High-Frequency Pulse Transistor 2T606A for Specialized Applications
View Details
High-Power GaN Microwave Transistor PP9138A
View Details
Bipolar Transistor 1NT251 for Switching Devices I93.456.000TU
View Details
Silicon Epitaxial-Planar Transistor for Radio Engineering KT3187B9
View Details
High-Power High-Voltage Field Transistor KP829A
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions