Available for Import
Power IGBT module AnM200HBEB12M
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM200HBEB12M
Specifications
Housing type
mpk-62
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
200 A
Configuration type
Общий эмиттер
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High Voltage Bipolar Power Transistor 2T8143U
View DetailsPowerful Linear LDMOS Transistor KP9171BS
View DetailsPowerful NPN Switching Transistors for Special Applications 2T856G
View DetailsPowerful GaN Microwave Transistor for Amplifier Applications PP9170E
View DetailsHigh-Power High-Voltage Field Transistor KP829D
View DetailsHigh Voltage Power N-Channel DMOS Transistors and Modules 2P829G9
View DetailsContinuous Mode DMOS RF Transistor P - 2P979B, 230MHz
View DetailsHigh-Power GaN Microwave Transistor for Amplifier Applications PP9139A1
View DetailsHigh-Power High-Voltage Field Transistor KP829B9
View DetailsN-channel MOSFET Transistor AnU12N10L
View DetailsDual N-Channel Power MOSFET Transistor MIK8205
View DetailsHigh-Frequency Impulse Transistors for Special Applications 2T603B/IU
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions