
Power IGBT module AnM200HBEB12M
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM200HBEB12M
Specifications
Housing type
mpk-62
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
200 A
Configuration type
Общий эмиттер
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In

High-Power IGBT Module AnM150HBEВ12M
View Details
Powerful NPN Switching Transistor 2T808A-2 for Special Applications
View Details
Powerful GaN-based Microwave Transistor PP9170A
View Details
Non-Hermetic Package Transistors and Diodes AnS75IGB065D
View Details
Silicon N-P-N Switching Transistor KT908A
View Details
Powerful Silicon High Voltage N-Channel DMOS Transistors and Modules 2P829G
View Details
High Voltage Bipolar Power Transistors 2T8144BM1
View Details
High-Frequency Impulse Transistors for Special Applications 2T603B/IU
View Details
Silicon Epitaxial-Planar Microwave Transistor KT6131A
View Details
Powerful High-Voltage Field Transistor KP829B
View Details
N-Channel MOSFET Transistor AnR40N20
View Details
Compact N-Channel Field Transistor 2P526A9
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions