
Power IGBT module AnM300RCB12H Wholesale
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM300RCB12H
Specifications
Housing type
mpk-62
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
300 A
Configuration type
Top level key
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In

Compact NPN Bipolar Transistor KT665A9 for Surface Mount
View Details
High-Frequency Impulse Transistors for Special Applications 2T603B/IU
View Details
Compact N-Channel Field Transistor 2P526A9
View Details
High-Power GaN Microwave Transistors PП9136A
View Details
LDMOS Microwave Transistor for Pulse Operation 2P9116B 1030-1090MHz
View Details
Powerful Linear LDMOS Transistor KP9171A
View Details
Silicon Epitaxial Planar p-n-p Transistor 2T3129B9/PK
View Details
Powerful High-Voltage N-P-N Switching Transistor KT8143F
View Details
N-Channel MOSFET Transistor AnB3N120 for Efficient Switching
View Details
DMOП P-Channel Transistor AnP53P03
View Details
High-Power NPN Switching Transistor 2T867A for Special Applications
View Details
High Voltage Bipolar Power Transistor 2T8144VM1
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions