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Powerful GaN-based Microwave Transistor PP9170D for Amplification Applications
Manufacturer:
NIIET OJSC
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Description
Powerful microwave transistor based on gallium nitride for use in amplifier stages, L-, S- and C-band frequencies. Due to the small values of parasitic parameters has enhanced performance characteristics. It is intended for operation in power amplifiers.
Specifications
Transistor weight
1 year
Frequency
4
Output power
100 W
Maximum voltage
150 V
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