Powerful Linear LDMOS Transistor KP9171A for RF Amplifiers

Powerful Linear LDMOS Transistor KP9171A for RF Amplifiers and Applications

Manufacturer:NIIET OJSC
Price:Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

Description

KP9171A - silicon epitaxial-planar field n-channel with insulated gate powerful microwave linear LDMOS transistor . It is intended for operation in power amplifiers in class AB mode in a common-source circuit at frequencies up to 860 MHz

Specifications

Weight
5 year
Output power in envelope peak
140 W
Power gain
20
Effluent efficiency
45 %
Initial drain current, mA
3
Gate leakage current, mA
0.05
Increased operating temperature of the enclosure
125 °C
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Shipping Terms

FOB Novorossiysk, RussiaCIF Available to major ports worldwideEXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C)Wire Transfer (T/T)Escrow Services

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