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Powerful Silicon Epitaxial-Planar n-p-n Switching Transistor KT879A for High Power Applications
Manufacturer:
NPP Iskra OJSC
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Description
Silicon epitaxial-planar n-p-n high-power switch transistors in metal-ceramic package designed for operation in high-power key devices.
Specifications
Secondary breakdown energy
0.1
Resorption time
1.5
Decline time
0.5
Emitter reverse current
0.01 A
Collector reverse current
0.003 A
Base-emitter saturation voltage
1.8 V
Collector-emitter saturation voltage
2 V
Boundary voltage
150 V
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