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Silicon Epitaxial Planar p-n-p Transistor 2T3129B9/PK for Amplifiers and Generators

High-Power Transistors

Manufacturer: ARSENAL KRZPP OJSC

Price: Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

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Available Models

Transistor 2T3130D9/PK Transistor 2T3130G9/PK Transistor 2T3129B9/PK Transistor 2T3129D9/PK Transistor 2T3129G9/PK

Transistor 2T3129A9/PC Transistor 2T3130B9/PK Transistor 2T3130E9/PK Transistor 2T3130B9/PK Transistor 2T3130A9/PK

Description

Silicon epitaxial-planar p-n-p transistors 2T3129V9/PC are made in miniature plastic case KT-46 and are designed for operation in amplifiers, generators, voltage stabilisers, pulse devices of special-purpose equipment.

Specifications

Boundary voltage

40 V

Static current transfer coefficient

80-250

Collector junction capacitance

125

Current transfer coefficient modulus at high frequency

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Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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Silicon Epitaxial Planar p-n-p Transistor 2T3129B9/PK for Amplifiers and Generators

Available Models

Description

Specifications

Share your requirements for a quick response!