Available for Import
Silicon n-p-n transistor KT231V9
Manufacturer:
KREMNIY EL OJSC
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Description
Designed for operation in switching, amplifying circuits, circuits of generation of high-frequency oscillations and other radio-electronic equipment of industrial and technical purpose
Specifications
Boundary voltage
Not less than 45 V
Maximum permissible DC collector-to-base voltage
Not more than 50 V
Maximum permissible collector pulse current
0,2 ?
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