Available for Import
Transistor 2T3130B9/PK
Manufacturer:
ARSENAL KRZPP OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon epitaxial-planar n-p-n transistors 2T3130B9/PC are made in miniature plastic case KT-46 and are intended for operation in amplifiers, generators, voltage stabilisers, special-purpose equipment.
Specifications
Boundary voltage
30 V
Static current transfer coefficient
200...500
Collector junction capacitance
B1/B8 2100/900 MHz
Current transfer coefficient modulus at high frequency
2
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High-Frequency Impulse Transistors for Special Applications 2T603B/IU
View Details
P-N-P Silicon Transistor KT234V9
View Details
N-Channel MOSFET Transistor AnD1N70
View Details
Power IGBT Module AnM75LCA12M
View Details
High-Power DMOS Transistors 2P7242A-4
View Details
High-Voltage NPN Silicon Switching Transistor KT8155G
View Details
AnDM100AD17M Power Module - Efficient Power Management
View Details
High-Power GaN Microwave Transistor for Amplifier Applications PP9139A1
View Details
Miniature Silicon Epitaxial-Planar n-p-n Transistor 2T368A9/PC
View Details
High-Power GaN Microwave Transistor PP9138A
View Details
Power Module AnM200SSP25M for Industrial Applications
View Details
Power IGBT Module AnM600SSC12M
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions