Available for Import
Transistor 4N20
Manufacturer:
MICRON OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Available Models
Description
Twin N-channel power field-effect transistor, manufactured using Trench MOSFET technology on 200mm diameter wafers
Specifications
Drain-to-source voltage
20 V
Gate-source voltage
B1/B8 2100/900 MHz V
Operating temperature range
50...150 °C
Storage temperature range
50...150 °C
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High-Frequency Impulse Transistors for Special Applications 2T603B/IU
View Details
Power Module AnM100HBA12M - High Efficiency Performance
View Details
High Voltage Bipolar Power Transistor 2T8143U
View Details
N-Channel MOSFET Transistor AnS140N06
View Details
High-Voltage Bipolar Power Transistors 2T8143F1
View Details
Compact NPN Bipolar Transistor KT665A9 for Surface Mount
View Details
Powerful Silicon High Voltage N-Channel DMOS Transistors and Modules 2P829G
View Details
Powerful GaN-Based Microwave Transistor PP9170B
View Details
High Voltage Field Transistor KP829A9
View Details
Powerful GaN-based Microwave Transistor PP9170A
View Details
Powerful Silicon Epitaxial-Planar n-p-n Switching Transistor KT879A
View Details
Power Module MTKI-2000-25 for Industrial Applications
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions