High-Performance Non-volatile Solid State Data Storage Device GS SSD U.2 DC

Non-volatile Solid State Data Storage Device GS SSD U.2 DC for Reliable Data Storage

Manufacturer: GS NANOTECH OJSC
Price: Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

Description

Volatile non-mechanical memory device on the basis of NAND flash chips produced by GES-Nanotech JSC

Specifications

Maximum random write speed, IOPS
65000
Maximum random read speed, IOPS
36000
Maximum sequential write speed
1000
Maximum sequential read speed
3200
Device type
ssd
Form factor
u.2
Interface
pci express gen3 x4
Buffer memory capacity
4096
Type of memory
tlc
Protection against de-energizing
Got it
SMART support
Got it
Operating temperature range
0...70 °C
Power supply voltage
5 V
Type of product according to PP RF 616
Memory and other data storage devices

Note: All specifications are provided by the manufacturer and may be subject to change. Please contact us to confirm the latest specifications before placing your order.

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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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