
Non-volatile Solid State Data Storage Device GS SSD U.2 DC for Reliable Data Storage
Manufacturer:
GS NANOTECH OJSC
Price:
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FOB, CIF & EXW terms available
Description
Volatile non-mechanical memory device on the basis of NAND flash chips produced by GES-Nanotech JSC
Specifications
Maximum random write speed, IOPS
65000
Maximum random read speed, IOPS
36000
Maximum sequential write speed
1000
Maximum sequential read speed
3200
Device type
ssd
Form factor
u.2
Interface
pci express gen3 x4
Buffer memory capacity
4096
Type of memory
tlc
Protection against de-energizing
Got it
SMART support
Got it
Operating temperature range
0...70 °C
Power supply voltage
5 V
Type of product according to PP RF 616
Memory and other data storage devices
Note: All specifications are provided by the manufacturer and may be subject to change. Please contact us to confirm the latest specifications before placing your order.
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Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
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