
Semiconductor module 2M410B1 Wholesale
Manufacturer:
NPP Iskra OJSC
Price:
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Description
Powerful silicon semiconductor modules in hybrid design on bipolar transistors with insulated gate and built-in anti-parallel BWDs, made on a single-key scheme (parallel key) in metal-ceramic cases with insulated flange; designed for use in power supply systems, converter equipment of secondary power supplies and electric drives, etc.
Specifications
Diode reverse recovery time
800
Output capacity
5.0E-10
Input capacity
6.0E-9
Shutdown time
800
Turn-on time
400
Constant forward voltage of the diode
2.5 V
Gate-emitter threshold voltage
2.5...6.5 V
Collector-emitter saturation voltage
2.8 V
Gate leakage current
0.5 A
Collector-emitter reverse current
0.002 A
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Delivery Time
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Air freight: 14-21 days (for urgent orders)
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