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High Voltage Bipolar Power Transistors 2T8144BM1 for Efficient Switching Applications
Manufacturer:
NPP Iskra OJSC
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Description
Silicon planar n-p-n high power high voltage switching transistors.
Specifications
Collector-emitter boundary voltage
450 V
Collector-base voltage
600 V
Collector-emitter saturation voltage
1.2 V
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