
Insulated Gate Bipolar Transistor (IGB) AnR40IGB12D
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Isolated gate bipolar transistor (IGTB) AnR40IGB12D
Specifications
Housing type
TO-247 (KT-43V)
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
40 A
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In

High-Power GaN Microwave Transistor for Amplifier Applications PP9139A1
View Details
AnDM100AD17M Power Module - Efficient Power Management
View Details
High-Voltage Bipolar Power Transistors 2T8143F1
View Details
Power IGBT Module AnM200RCB065M
View Details
N-Channel MOSFET Transistor An10N70S10
View Details
Dual N-Channel Power MOSFET Transistor MIK8205
View Details
Power IGBT Module AnM100RCA065M
View Details
High Voltage N-Channel DMOS Transistor KP7154BS
View Details
Continuous Mode DMOS RF Transistor P - 2P979B, 230MHz
View Details
DMOП P-Channel Transistor AnP53P03
View Details
Transistor Optocoupler AOT123A with Local Gold Plating
View Details
High-Power IGBT Module AnM150HBEВ12M
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions