
Transistors without diode in non-hermetic package AnR20IGB17
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Diode-less transistors in non-hermetic package AnR20IGB17
Specifications
Housing type
TO-247 (KT-43V)
Type of acceptance
QA
Maximum allowable voltage
1700 V
Maximum permissible current
20 A
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In

Powerful Silicon Epitaxial-Planar n-p-n Switching Transistor KT879A
View Details
High-Power High-Voltage Field Transistor KP829B9
View Details
High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829I9
View Details
Power Module AnDM200EA12M - Efficient Energy Control
View Details
AnDM150CD12M Power Module for Enhanced Performance
View Details
High-Power GaN Microwave Transistors PП9136A
View Details
High-Power High-Voltage Field Transistor KP829Zh
View Details
Silicon Epitaxial-Planar N-P-N Transistor 2T368A/PK
View Details
High Voltage Bipolar Power Transistor 2T8143U
View Details
High-Frequency Impulse Transistors for Special Applications 2T603B/IU
View Details
High Voltage Field Transistor KP829A9
View Details
Silicon N-P-N Switching Transistor KT908A
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions