Available for ImportHigh Voltage Bipolar Power Transistor 2T8143U for High-Power Applications
Manufacturer:NPP Iskra OJSC
Price:Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon epitaxial-planar n-p-n high-power high-voltage switching transistors in metal-ceramic package, intended for operation in high-power key, amplifying devices and other special-purpose equipment
Specifications
Collector-emitter boundary voltage
180 V
Collector-emitter saturation voltage
0.8 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Powerful NPN Transistor 2T808A for Special Applications
View Details
Powerful Linear LDMOS Transistor KP9171A
View Details
High-Power GaN Microwave Transistors PП9136A
View Details
Power IGBT Module AnM450HBE065M for Efficient Switching
View Details
Silicon Epitaxial Planar p-n-p Transistor 2T3129B9/PK
View Details
Powerful GaN-based Microwave Transistor PP9139B1
View Details
High-Frequency Impulse Transistors for Special Applications 2T603B/IU
View Details
High Voltage Powerful N-Channel DMOS Transistor KP7154BS
View Details
High-Power DMOS Transistors 2P7246A-5
View Details
N-Channel MOSFET Transistor AnB3N120 for Efficient Switching
View Details
High Voltage N-Channel DMOS Transistor KP7154BS
View Details
High Voltage N-P-N Silicon Planar Switching Transistor KT8190V
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions