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High Voltage Bipolar Power Transistor 2T8143U for High-Power Applications

High-Power Transistors

Manufacturer:NPP Iskra OJSC

Price:Request Quote

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FOB, CIF & EXW terms available

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Available Models

High-voltage bipolar high-current transistors 2T8143T1 High-power NPN special-purpose switching transistors 2T879A High-power NPN special-purpose switching transistors 2T879B High-voltage bipolar high-current transistors 2T8143S High-voltage bipolar high-current transistors 2T8143T

High voltage bipolar high current transistors 2T8143U1 High-voltage bipolar high-current transistors 2T8143F High-voltage bipolar high-current transistors 2?8143?1

Description

Silicon epitaxial-planar n-p-n high-power high-voltage switching transistors in metal-ceramic package, intended for operation in high-power key, amplifying devices and other special-purpose equipment

Specifications

Collector-emitter boundary voltage

180 V

Collector-emitter saturation voltage

0.8 V

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Shipping Terms

FOB Novorossiysk, RussiaCIF Available to major ports worldwideEXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C)Wire Transfer (T/T)Escrow Services

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High Voltage Bipolar Power Transistor 2T8143U for High-Power Applications

Available Models

Description

Specifications

Share your requirements for a quick response!