High-Power GaN Microwave Transistor with Enhanced Performance - PP9138B
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High-Power GaN Microwave Transistor PP9138BAvailable for Import

High-Power GaN Microwave Transistor PP9138B for Amplifier Applications

High-Power Transistors
Manufacturer:NIIET OJSC
Price:Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

Description

Powerful microwave transistor on the basis of gallium nitride for application in amplifying stages, L-, S- and C-band frequencies. Due to the small values of parasitic parameters has enhanced performance characteristics. It is intended for operation in power amplifiers.

Specifications

EFFICIENCY
SBVVBG %
Output power
25 W
Maximum voltage
130 V
Transistor weight
1 year
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Shipping Terms

FOB Novorossiysk, RussiaCIF Available to major ports worldwideEXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C)Wire Transfer (T/T)Escrow Services

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