Available for Import
Powerful GaN-based Microwave Transistor PP9170G for Amplifier Applications
Manufacturer:
NIIET OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Powerful microwave transistor on the basis of gallium nitride for application in amplifying stages, L-, S- frequency ranges. Due to small values of parasitic parameters has enhanced performance characteristics. It is intended for operation in power amplifiers.
Specifications
Transistor weight
1 year
Frequency
4
Output power
SBVVBG W
Maximum voltage
150 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Powerful NPN Transistor 2T808A for Special Applications
View Details
High Voltage Powerful N-Channel DMOS Transistor KP7154BS
View Details
Powerful GaN-Based Microwave Transistor PP9170V
View Details
High-Power NPN Switching Transistor 2T867A for Special Applications
View Details
N-Channel MOSFET Transistor AnS140N06
View Details
High Voltage Bipolar Power Transistor 2T8143U
View Details
High-Power High-Voltage Field Transistor KP829Zh
View Details
Silicon Epitaxial-Planar N-P-N Transistor 2T368A/PK
View Details
Powerful NPN Amplifying Transistors Special Purpose 2T908A-2
View Details
Powerful GaN-based Microwave Transistor PP9139B1
View Details
High-Power DMOS Transistors 2P7246A-5
View Details
Power IGBT Module AnM75LCA12M
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions