Available for Import
High-voltage bipolar high-current transistors 2T8143T1
Manufacturer:
NPP Iskra OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon epitaxial-planar n-p-n high-power high-voltage switching transistors in metal-ceramic package, intended for operation in high-power key, amplifying devices and other special-purpose equipment
Specifications
Collector-emitter boundary voltage
120 V
Collector-emitter saturation voltage
0.8 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High Voltage Power N-Channel DMOS Transistors and Modules 2P829G9
View DetailsPower Switches K3003KI014A
View DetailsSilicon Planar Transistor 2T117V OSH for Electronic Devices
View DetailsField-effect P-Channel Transistor 2P527A9
View DetailsPowerful High-Voltage Field Transistor KP829B
View DetailsCompact N-Channel Field Transistor 2P526A9
View DetailsPowerful GaN-based Microwave Transistor PP9170D
View DetailsPower IGBT Module AnM200RCB065M
View DetailsSpecial Purpose Transistor Optocouplers 3OT127V
View DetailsAnDM100AD17M Power Module - Efficient Power Management
View DetailsHigh Voltage Bipolar Power Transistor 2T8144VM1
View DetailsHigh Voltage Bipolar Power Transistor 2T8143U
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions