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Powerful GaN Microwave Transistor for Amplification in L, S, and C Frequency Bands
Manufacturer:
NIIET OJSC
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Description
Powerful microwave transistor based on gallium nitride for use in amplifier stages, L-, S- and C-band frequencies. Due to the small values of parasitic parameters has enhanced performance characteristics. It is intended for operation in power amplifiers.
Specifications
Output power
10 W
Chip weight
1 year
Maximum voltage
130 V
Maximum current
1.5 A
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