Special purpose high-frequency pulse transistors 2... | T...

Description

Silicon epitaxial-planar n-p-n pulse high-frequency transistors in metal-glass case, designed for operation in circuits of special-purpose equipment.

Specifications

Collector reverse current
3.0E-6 A
Emitter reverse current
3.0E-6 A
Collector junction capacitance
1.5E-11
Emitter junction capacitance
4.0E-11
Time constant of the feedback circuit at high frequency
400
Static current transfer coefficient
at least 20, not more than 80
Collector-emitter saturation voltage
0.8 V
Base - emitter saturation voltage
1.5 V
Resorption time
70
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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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