
Powerful GaN Microwave Transistor for Amplifier Applications - Model PP9170E
Manufacturer:
NIIET OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Powerful microwave transistor based on gallium nitride for use in amplifier stages, L-, C- and S-band frequencies.
Specifications
Transistor weight
1 year
Frequency
6
Output power
SBVVBG W
Maximum voltage
150 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In

Powerful NPN Switching Transistors for Special Applications 2T856G
View Details
High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829I9
View Details
High-Power Special Purpose Field Effect Transistors 2P7152A
View Details
Powerful NPN Transistor 2T808A for Special Applications
View Details
Silicon Planar Transistor 2T117V OSH for Electronic Devices
View Details
Power Module AnDM200EA12M - Efficient Energy Control
View Details
N-Channel MOSFET Transistor AnS140N06
View Details
Powerful IGBT Module AnM450HBE12M for Efficient Energy Control
View Details
Power Module AnM200SSP25M for Industrial Applications
View Details
Powerful GaN-Based Microwave Transistor PP9170V
View Details
N-channel MOSFET Transistor AnU12N10L
View Details
Silicon Epitaxial-Planar Transistor for Radio Engineering KT3187B9
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions