
Transistors without diode in non-hermetic package AnP15IGB12
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Diode-less transistors in non-hermetic package AnP15IGB12
Specifications
Housing type
TO-220 (KT-28-2)
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
15 A
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In

Power Module MTKI-2000-25 for Industrial Applications
View Details
High Voltage Powerful N-Channel DMOS Transistor KP7154BS
View Details
Transistor Optocoupler Special Purpose 3OT123A9 OSM
View Details
Powerful IGBT Module AnM450HBE12M for Efficient Energy Control
View Details
High Voltage Bipolar Power Transistor 2T8143U
View Details
Powerful NPN Switching Transistor 2T808A-2 for Special Applications
View Details
High-Frequency Pulse Transistor 2T606A for Specialized Applications
View Details
Silicon Epitaxial-Planar Microwave Transistor KT6131A
View Details
Special Purpose Thyristor Optocouplers 3OU186B
View Details
High-Voltage Bipolar Power Transistors 2T8143F1
View Details
High Voltage N-Channel DMOS Transistor KP7154BS
View Details
High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829J
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions