Available for Import
High-power high-voltage field-effect transistor KP829B9
Manufacturer:
NPP Iskra OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
RSI.open. = 0.15Ohm; USI max = 600B; UZI max = ±25V; IC max = 20A; Rmah=200W
Specifications
Model
KP829B9
Type
powerful high-voltage
Assignment
for use in modern and advanced secondary power supply sources, in nodes and blocks of converters and in other equipment of wide application manufactured for the national economy
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Powerful IGBT Module AnM450HBE12M for Efficient Energy Control
View DetailsSilicon Epitaxial-Planar N-P-N Transistor 2T368A/PK
View DetailsPowerful GaN Microwave Transistor for Amplifier Applications PP9170E
View DetailsPowerful GaN-Based Microwave Transistor PP9170B
View DetailsHigh Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829I9
View DetailsHigh Voltage N-P-N Silicon Planar Switching Transistor KT8190V
View DetailsWave Running Light "Lotoshnik
View DetailsN-Channel MOSFET Transistor AnS140N06
View DetailsPowerful NPN Switching Transistors for Special Applications 2T856G
View DetailsPower Module AnM200HBB12M for Industrial Applications
View DetailsHigh Voltage N-P-N Silicon Planar Switching Transistor KT8121B2
View DetailsPower IGBT Module AnM600SSC12M
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions