Available for Import
Power IGBT Module AnM600SSC12M for High-Efficiency Applications
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM600SSC12M
Specifications
Housing type
MPK-62-2
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
600 A
Configuration type
Single key
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High-Power NPN Transistors for Special Applications 2T968A-5
View Details
High Voltage N-P-N Silicon Planar Switching Transistor KT8190V
View Details
Power Module AnDM200EA12M - Efficient Energy Control
View Details
High-Frequency p-n-p Transistor 2T3108A/PK
View Details
Power IGBT Module AnM450HBE065M for Efficient Switching
View Details
High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829B
View Details
Powerful N-Channel DMOP Transistors 2P7246A91
View Details
N-Channel MOSFET Transistor AnR40N20
View Details
High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829J
View Details
High-Frequency Impulse Transistors for Special Applications 2T603B/IU
View Details
N-Channel MOSFET Transistor AnD1N70
View Details
AnDM100AD17M Power Module - Efficient Power Management
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions