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High-Power Special Purpose Field Effect Transistors 2P7152A for Electronics
Manufacturer:
NPP Iskra OJSC
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Description
Silicon high-current n-channel field-effect transistors in ceramic-metal insulated package, intended for use in radio-electronic equipment.
Specifications
Initial drain current
5.0E-6 A
Gate leakage current
1.0E-7 A
Drain-to-source resistance in open state
0.012 ohm
Threshold voltage gate - source
2...4 V
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