Available for Import
High-voltage bipolar high-current transistors 2T8144BM
Manufacturer:
NPP Iskra OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Available Models
Description
Silicon planar n-p-n high power high voltage switching transistors.
Specifications
Collector-emitter boundary voltage
400 V
Collector-base voltage
600 V
Collector-emitter saturation voltage
1.2 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High-Frequency Field Transistors for Special Applications 2P301B/IU
View Details
High Voltage Bipolar Power Transistor 2T8144VM1
View Details
N-Channel MOSFET Transistor AnB12N20
View Details
Silicon Epitaxial-Planar N-P-N Transistor 2T368A/PK
View Details
Powerful IGBT Module AnM450HBE12M for Efficient Energy Control
View Details
Powerful GaN-based Microwave Transistor PP9139B1
View Details
Dual N-Channel Power MOSFET Transistor MIK8205
View Details
Silicon Planar Transistor 2T117V OSH for Electronic Devices
View Details
N-Channel MOSFET Transistor AnS140N06
View Details
Powerful Silicon Epitaxial-Planar n-p-n Switching Transistor KT879A
View Details
High-Frequency Pulse Transistor 2T606A for Specialized Applications
View Details
High-Power Special Purpose Field Effect Transistors 2P7152A
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions