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P-N-P Silicon Transistor KT234V9 for Amplification and Switching Applications

High-Power Transistors

Manufacturer:KREMNIY EL OJSC

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FOB, CIF & EXW terms available

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Available Models

Silicon n-p-n transistor KT231V9

Description

Designed for operation in switching, amplifying circuits, circuits of generation of high-frequency oscillations and other radio-electronic equipment of industrial and technical purpose

Specifications

Boundary voltage

Not less than 45 V

Maximum permissible DC collector-to-base voltage

Not more than 50 V

Base-emitter saturation voltage

Not more than 1.0 V

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Shipping Terms

FOB Novorossiysk, RussiaCIF Available to major ports worldwideEXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C)Wire Transfer (T/T)Escrow Services

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P-N-P Silicon Transistor KT234V9 for Amplification and Switching Applications

Available Models

Description

Specifications

Share your requirements for a quick response!