Available for Import
P-N-P Silicon Transistor KT234V9 for Amplification and Switching Applications
Manufacturer:
KREMNIY EL OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Available Models
Description
Designed for operation in switching, amplifying circuits, circuits of generation of high-frequency oscillations and other radio-electronic equipment of industrial and technical purpose
Specifications
Boundary voltage
Not less than 45 V
Maximum permissible DC collector-to-base voltage
Not more than 50 V
Base-emitter saturation voltage
Not more than 1.0 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High Voltage N-P-N Silicon Planar Switching Transistor KT8190V
View Details
Powerful GaN-Based Microwave Transistor PP9170B
View Details
Power IGBT Module AnM100RCA065M
View Details
Non-Hermetic Package Transistors and Diodes AnS75IGB065D
View Details
Special Purpose Transistor Optocoupler 3OT127A
View Details
Power Switches K3003KI014A
View Details
High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829A
View Details
N-channel MOSFET Transistor AnU12N10L
View Details
Power Module MTKI-2000-25 for Industrial Applications
View Details
Powerful High-Voltage N-P-N Switching Transistor KT8143F
View Details
High-Power GaN Microwave Transistor PP9138A
View Details
Compact NPN Bipolar Transistor KT665A9 for Surface Mount
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions