
AOT110B transistor optocoupler with full gold-plating
Manufacturer:
NPP Iskra OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Available Models
Description
Optocouplers transistorised in a metal-glass case, consisting of silicon planarho n-p-n compound transistor receivers and mesa-epitaxial emitting diodes on the basis of GaAlAs, intended for switching DC circuits with galvanic isolation between input and output.
Specifications
Input voltage
2 V
Output residual voltage
1.5 V
Output leakage current
0.0001 A
Insulation resistance
1000000000 ohm
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In

Non-Hermetic Transistors and Diodes AnR30IGB065D
View Details
Power Module AnM200HBB12M for Industrial Applications
View Details
N-channel MOSFET Transistor AnU12N10L
View Details
Power Module AnDM200EA12M - Efficient Energy Control
View Details
AnDM400SC12M Power Module
View Details
High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829I9
View Details
High Voltage Field Transistor KP829A9
View Details
N-Channel MOSFET Transistor AnR40N20
View Details
High-Power IGBT Module AnM150HBEВ12M
View Details
Transistor Optocoupler AOT110B with Local Gold-Plated Pins
View Details
Powerful GaN Microwave Transistor for Amplification PP9137A
View Details
High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829A
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions