
High-voltage bipolar high-current transistors 2?8143?2
Manufacturer:
NPP Iskra OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon epitaxial-planar n-p-n high-power high-voltage switching transistors in metal-ceramic package, intended for operation in high-power key, amplifying devices and other special-purpose equipment
Specifications
Collector-emitter boundary voltage
120 V
Collector-emitter saturation voltage
0.8 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In

High-Power GaN Microwave Transistor PP9138B
View Details
Powerful Linear LDMOS Transistor KP9171BS
View Details
High-Voltage NPN Silicon Switching Transistor KT8155G
View Details
High-Power High-Voltage Field Transistor KP829B9
View Details
Low-Noise GaAs Planar Field Transistor AП379A9
View Details
Power Module AnS150FRD065 for Industrial Applications
View Details
P-N-P Silicon Transistor KT234V9
View Details
Powerful N-Channel DMOP Transistors 2P7246A91
View Details
Power Module AnDM200EA12M - Efficient Energy Control
View Details
Silicon Epitaxial Planar p-n-p Transistor 2T3129B9/PK
View Details
Transistor Optocoupler Special Purpose 3OT123A9 OSM
View Details
Transistor Optocoupler AOT123A with Local Gold Plating
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions