Available for Import
High-voltage bipolar high-current transistors 2?8143?2
Manufacturer:
NPP Iskra OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon epitaxial-planar n-p-n high-power high-voltage switching transistors in metal-ceramic package, intended for operation in high-power key, amplifying devices and other special-purpose equipment
Specifications
Collector-emitter boundary voltage
120 V
Collector-emitter saturation voltage
0.8 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High-Power GaN Microwave Transistor for Amplifier Applications PP9139A1
View Details
High-Frequency p-n-p Transistor 2T3108A/PK
View Details
High Voltage N-P-N Switching Transistor KT8144A
View Details
Power IGBT Module AnM600SSC12M
View Details
AnDM150CD12M Power Module for Enhanced Performance
View Details
Powerful IGBT Module AnM450HBE12M for Efficient Energy Control
View Details
Special Purpose Transistor Optocouplers 3ОТ123Г ОСМ
View Details
Powerful GaN-Based Microwave Transistor PP9170V
View Details
High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829I9
View Details
Powerful GaN-based Microwave Transistor PP9139B1
View Details
N-Channel MOSFET Transistor AnB12N20
View Details
N-Channel MOSFET Transistor AnR40N20
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions