
High-voltage bipolar high-current transistors 2?8143?3
Manufacturer:
NPP Iskra OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon epitaxial-planar n-p-n high-power high-voltage switching transistors in metal-ceramic package, intended for operation in high-power key, amplifying devices and other special-purpose equipment
Specifications
Collector-emitter boundary voltage
120 V
Collector-emitter saturation voltage
0.8 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In

Special Purpose Transistor Optocoupler 3OT127A
View Details
AnDM150CD12M Power Module for Enhanced Performance
View Details
High-Voltage NPN Silicon Switching Transistor KT8155G
View Details
Power IGBT Module AnM200RCB065M
View Details
N-Channel MOSFET Transistor AnB12N20
View Details
Special Purpose Transistor Optocouplers 3ОТ123Г ОСМ
View Details
High Voltage Bipolar Power Transistor 2T8144VM1
View Details
High Voltage Power N-Channel DMOS Transistors and Modules 2P829G9
View Details
Non-Hermetic Transistors and Diodes AnR30IGB065D
View Details
Miniature Silicon Epitaxial-Planar n-p-n Transistor 2T368A9/PC
View Details
High Voltage N-P-N Silicon Planar Switching Transistor KT8190V
View Details
High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829J
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions