
High-voltage bipolar high-current transistors 2T8143P
Manufacturer:
NPP Iskra OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon epitaxial-planar n-p-n high-power high-voltage switching transistors in metal-ceramic package, intended for operation in high-power key, amplifying devices and other special-purpose equipment
Specifications
Collector-emitter boundary voltage
150 V
Collector-emitter saturation voltage
1.2 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In

Special Purpose Transistor Optocoupler 3OT123B9 OSH
View Details
High Voltage N-P-N Silicon Planar Switching Transistor KT8121B2
View Details
Non-Hermetic Package Transistors and Diodes AnS75IGB065D
View Details
High Voltage Power N-Channel DMOS Transistors and Modules 2P829G9
View Details
Power Module AnDM200EA12M - Efficient Energy Control
View Details
Powerful GaN-based Microwave Transistor PP9170D
View Details
Powerful GaN Microwave Transistor for Amplification PP9137A
View Details
LDMOS Microwave Transistor for Pulse Operation 2P9116B 1030-1090MHz
View Details
Powerful NPN Transistor 2T808A for Special Applications
View Details
High-Power GaN Microwave Transistor PP9138B
View Details
Power Wrenches K3003KI014
View Details
Silicon Planar Transistor 2T117V OSH for Electronic Devices
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions