
Power IGBT module AnM200RCB12H
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM200RCB12H
Specifications
Housing type
mpk-62
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
200 A
Configuration type
Top level key
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In

Special Purpose Transistor Optocouplers 3ОТ123Г ОСМ
View Details
Non-Hermetic Package Transistors and Diodes AnS75IGB065D
View Details
High-Frequency Pulse Transistor 2T606A for Specialized Applications
View Details
High Voltage N-P-N Silicon Planar Switching Transistor KT8190V
View Details
Powerful NPN Transistor 2T808A for Special Applications
View Details
High-Voltage NPN Silicon Switching Transistor KT8155G
View Details
High-Power GaN Microwave Transistor PP9138B
View Details
High-Voltage Bipolar Power Transistors 2T8143F1
View Details
Compact NPN Bipolar Transistor KT665A9 for Surface Mount
View Details
Powerful GaN Microwave Transistor for Amplification PP9137A
View Details
Powerful IGBT Module AnM450HBE12M for Efficient Energy Control
View Details
High-Power IGBT Module AnM150HBEВ12M
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions