Available for Import
Power IGBT module AnM200RCB12H
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM200RCB12H
Specifications
Housing type
mpk-62
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
200 A
Configuration type
Top level key
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High Voltage Field Transistor KP829A9
View DetailsHigh-Power High-Voltage Field Transistor KP829B9
View DetailsPower Module AnDM200EA12M - Efficient Energy Control
View DetailsHigh-Frequency Pulse Transistor 2T606A for Specialized Applications
View DetailsLDMOS Microwave Transistor for Pulse Operation 2P9116B 1030-1090MHz
View DetailsPower IGBT Module AnM100RCA065M
View DetailsHigh Voltage N-P-N Switching Transistor KT8144A
View DetailsHigh-Power DMOS Transistors 2P7246A-5
View DetailsHigh-Frequency p-n-p Transistor 2T3108A/PK
View DetailsPower Module AnM200SSP25M for Industrial Applications
View DetailsTransistor Optocoupler Special Purpose 3OT123A9 OSM
View DetailsSpecial Purpose Transistor Optocouplers 3ОТ123Г ОСМ
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions