Available for Import
Power IGBT module AnM150HBEB12M
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM150HBEB12M
Specifications
Housing type
mpk-62
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
150 A
Recovery time
200
Configuration type
half-bridge
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High-Power GaN Microwave Transistors PП9136A
View DetailsHigh-Power High-Voltage Field Transistor KP829B9
View DetailsHigh-Power Special Purpose Field Effect Transistors 2P7152A
View DetailsHigh Voltage N-P-N Silicon Planar Switching Transistor KT8121B2
View DetailsPower IGBT Module AnM600SSC12M
View DetailsHigh-Frequency Impulse Transistors for Special Applications 2T603B/IU
View DetailsSilicon N-P-N Switching Transistor KT908A
View DetailsMiniature Silicon Epitaxial-Planar n-p-n Transistor 2T368A9/PC
View DetailsHigh Voltage N-Channel DMOS Transistor KP7154BS
View DetailsCompact N-Channel Field Transistor 2P526A9
View DetailsPowerful NPN Switching Transistor 2T808A-2 for Special Applications
View DetailsHigh Voltage Bipolar Power Transistors 2T8144BM1
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions