Available for Import
Power IGBT module AnM150HBEB12M
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM150HBEB12M
Specifications
Housing type
mpk-62
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
150 A
Recovery time
200
Configuration type
half-bridge
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Dual N-Channel Power MOSFET Transistor MIK8205
View Details
High-Power NPN Transistors for Special Applications 2T968A-5
View Details
High Voltage N-P-N Switching Transistor KT8144A
View Details
High-Frequency p-n-p Transistor 2T3108A/PK
View Details
Powerful NPN Transistor 2T808A for Special Applications
View Details
High Voltage N-Channel DMOS Transistor KP7154BS
View Details
High Voltage Field Transistor KP829A9
View Details
High-Frequency Impulse Transistors for Special Applications 2T603B/IU
View Details
High-Frequency Pulse Transistor 2T606A for Specialized Applications
View Details
Powerful IGBT Module AnM450HBE12M for Efficient Energy Control
View Details
Powerful Silicon High Voltage N-Channel DMOS Transistors and Modules 2P829G
View Details
Powerful NPN Amplifying Transistors Special Purpose 2T908A-2
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions