Available for Import
Power IGBT module AnM300HBEB12M
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM300HBEB12M
Specifications
Housing type
mpk-62
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
300 A
Configuration type
Общий эмиттер
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Power IGBT Module AnM450HBE065M for Efficient Switching
View DetailsPowerful GaN-Based Microwave Transistor PP9170V
View DetailsSilicon N-P-N Switching Transistor KT908A
View DetailsHigh Voltage Power N-Channel DMOS Transistors and Modules 2P829G9
View DetailsPower Module MTKI-2000-25 for Industrial Applications
View DetailsPowerful GaN-based Microwave Transistor PP9170D
View DetailsSilicon Epitaxial-Planar Transistor for Radio Engineering KT3187B9
View DetailsHigh-Power DMOS Transistors 2P7242A-4
View DetailsHigh-Power High-Voltage Field Transistor KP829Zh
View DetailsTransistor Optocoupler AOT110B with Local Gold-Plated Pins
View DetailsPowerful GaN Microwave Transistor for Amplifier Applications PP9170E
View DetailsN-Channel MOSFET Transistor AnB3N120 for Efficient Switching
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions