Available for Import
Power IGBT module AnM300HBEB12M
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM300HBEB12M
Specifications
Housing type
mpk-62
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
300 A
Configuration type
Общий эмиттер
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Compact N-Channel Field Transistor 2P526A9
View Details
Powerful Linear LDMOS Transistor KP9171BS
View Details
Special Purpose Transistor Optocouplers 3ОТ123Г ОСМ
View Details
N-Channel MOSFET Transistor AnS140N06
View Details
Powerful GaN-based Microwave Transistor PP9170A
View Details
High Voltage N-P-N Switching Transistor KT8144A
View Details
High-Power GaN Microwave Transistor PP9138A
View Details
N-channel MOSFET Transistor AnU12N10L
View Details
High-Frequency p-n-p Transistor 2T3108A/PK
View Details
Power Module AnDM200EA12M - Efficient Energy Control
View Details
AnDM400SC12M Power Module
View Details
Compact NPN Bipolar Transistor KT665A9 for Surface Mount
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions