Available for Import
Power IGBT module AnM200HBB12M
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM200HBB12M
Specifications
Housing type
mpk-62
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
200 A
Recovery time
190
Configuration type
half-bridge
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High-Power DMOS Transistors 2P7246A-5
View DetailsPowerful GaN Microwave Transistor for Amplifier Applications PP9170E
View DetailsPowerful N-Channel DMOP Transistors 2P7246A91
View DetailsN-Channel MOSFET Transistor AnB12N20
View DetailsNon-Hermetic Package Transistors and Diodes AnS75IGB065D
View DetailsHigh Voltage Bipolar Power Transistor 2T8143U
View DetailsWave Running Light "Lotoshnik
View DetailsHigh-Power High-Voltage Field Transistor KP829A
View DetailsHigh Voltage Field Transistor KP829A9
View DetailsTransistor Optocoupler AOT123A with Local Gold Plating
View DetailsHigh-Frequency Impulse Transistors for Special Applications 2T603B/IU
View DetailsN-channel MOSFET Transistor AnU12N10L
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions